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Title: Pyroelectric response in crystalline hafnium zirconium oxide (Hf 1- x Zr x O 2 ) thin films

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4976519· OSTI ID:1356224

Pyroelectric coefficients were measured for 20 nm thick crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films across a composition range of 0 ≤ x ≤ 1. Pyroelectric currents were collected near room temperature under zero applied bias and a sinusoidal oscillating temperature profile to separate the influence of non-pyroelectric currents. The pyroelectric coefficient was observed to correlate with zirconium content, increased orthorhombic/tetragonal phase content, and maximum polarization response. The largest measured absolute value was 48 μCm-2K-1 for a composition with x = 0.64, while no pyroelectric response was measured for compositions which displayed no remanent polarization (x = 0, 0.91, 1).

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000; AC04- 94AL85000
OSTI ID:
1356224
Alternate ID(s):
OSTI ID: 1985572
Report Number(s):
SAND-2017-2871J; 651794
Journal Information:
Applied Physics Letters, Vol. 110, Issue 7; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 77 works
Citation information provided by
Web of Science

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Effect of Annealing Ferroelectric HfO 2 Thin Films: In Situ, High Temperature X-Ray Diffraction journal May 2018
Toward Thick Piezoelectric HfO 2 ‐Based Films journal December 2019
Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances journal September 2018
Pyroelectricity of silicon-doped hafnium oxide thin films journal April 2018
Frequency domain analysis of pyroelectric response in silicon-doped hafnium oxide (HfO 2 ) thin films journal September 2018
Thermal resistance and heat capacity in hafnium zirconium oxide (Hf 1–x Zr x O 2 ) dielectrics and ferroelectric thin films journal November 2018
Stabilization of ferroelectric phase of Hf 0.58 Zr 0.42 O 2 on NbN at 4 K journal March 2019
Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO 2 thin films journal March 2019
Improvement in ferroelectricity of Hf x Zr 1−x O 2 thin films using top- and bottom-ZrO 2 nucleation layers journal June 2019
Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf 0.5 Zr 0.5 O 2 /TiN capacitors journal October 2019
Enhanced pyroelectric properties of Bi 1−x La x FeO 3 thin films journal November 2019
Fluorite-structure antiferroelectrics journal November 2019
Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications journal April 2019
Review and perspective on ferroelectric HfO2-based thin films for memory applications journal August 2018
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