Thermal resistance and heat capacity in hafnium zirconium oxide (Hf1–xZrxO2) dielectrics and ferroelectric thin films

Scott, Ethan A.; Smith, Sean W.; Henry, M. David; Rost, Christina M.; Giri, Ashutosh; Gaskins, John T.; Fields, Shelby S.; Jaszewski, Samantha T.; Ihlefeld, Jon F.; Hopkins, Patrick E.

doi:10.1063/1.5052244

Thermal resistance and heat capacity in hafnium zirconium oxide (Hf_1–xZr_xO₂) dielectrics and ferroelectric thin films

Journal Article · Sun Nov 04 23:00:00 EST 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5052244· OSTI ID:1483978

^[1]; Smith, Sean W. ^[2]; Henry, M. David ^[2]; ^[1]; Giri, Ashutosh ^[1]; ^[1]; Fields, Shelby S. ^[3]; Jaszewski, Samantha T. ^[3]; ^[4]; Hopkins, Patrick E. ^[5]

Univ. of Virginia, Charlottesville, VA (United States). Dept. of Mechanical and Aerospace Engineering
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of Virginia, Charlottesville, VA (United States). Dept. of Materials Science and Engineering
Univ. of Virginia, Charlottesville, VA (United States). Dept. of Materials Science and Engineering, Dept. of Electrical and Computer Engineering
Univ. of Virginia, Charlottesville, VA (United States). Dept. of Mechanical and Aerospace Engineering, Dept. of Materials Science and Engineering, Dept. of Physics

We report on the thermal resistances of thin films (20 nm) of hafnium zirconium oxide (Hf_1–xZr_xO₂) with compositions ranging from 0 ≤ x ≤ 1. Measurements were made via time-domain thermoreflectance and analyzed to determine the effective thermal resistance of the films in addition to their associated thermal boundary resistances. We find effective thermal resistances ranging from 28.79 to 24.72 m² K GW^-1 for amorphous films, which decreased to 15.81 m² K GW^-1 upon crystallization. Furthermore, we analyze the heat capacity for two compositions, x = 0.5 and x = 0.7, of Hf_1–xZr_xO₂ and find them to be 2.18 ± 0.56 and 2.64 ± 0.53 MJ m^-3 K^-1, respectively.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1483978

Report Number(s):: SAND--2018-12885J; 669810

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 113; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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