Thermal resistance and heat capacity in hafnium zirconium oxide (Hf1–xZrxO2) dielectrics and ferroelectric thin films
- Univ. of Virginia, Charlottesville, VA (United States). Dept. of Mechanical and Aerospace Engineering
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Univ. of Virginia, Charlottesville, VA (United States). Dept. of Materials Science and Engineering
- Univ. of Virginia, Charlottesville, VA (United States). Dept. of Materials Science and Engineering, Dept. of Electrical and Computer Engineering
- Univ. of Virginia, Charlottesville, VA (United States). Dept. of Mechanical and Aerospace Engineering, Dept. of Materials Science and Engineering, Dept. of Physics
We report on the thermal resistances of thin films (20 nm) of hafnium zirconium oxide (Hf1–xZrxO2) with compositions ranging from 0 ≤ x ≤ 1. Measurements were made via time-domain thermoreflectance and analyzed to determine the effective thermal resistance of the films in addition to their associated thermal boundary resistances. We find effective thermal resistances ranging from 28.79 to 24.72 m2 K GW-1 for amorphous films, which decreased to 15.81 m2 K GW-1 upon crystallization. Furthermore, we analyze the heat capacity for two compositions, x = 0.5 and x = 0.7, of Hf1–xZrxO2 and find them to be 2.18 ± 0.56 and 2.64 ± 0.53 MJ m-3 K-1, respectively.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1483978
- Report Number(s):
- SAND-2018-12885J; 669810
- Journal Information:
- Applied Physics Letters, Vol. 113, Issue 19; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 16 works
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