Technique for achieving large-grain Ag.sub.2ZnSn(S,Se).sub.4thin films
Techniques for increasing grain size in AZTSSe absorber materials are provided. In one aspect, a method for forming an absorber film on a substrate includes: contacting the substrate with an Ag source, a Zn source, a Sn source, and an S source and/or an Se source under conditions sufficient to form the absorber film on the substrate having a target composition of: Ag.sub.XZn.sub.YSn(S,Se).sub.Z, wherein 1.7<2.2, 0.9<1.3, and 3.5<4.5, and including an amount of the Ag source that is from about 10% to about 30% greater than is needed to achieve the target composition; annealing the absorber film; and removing excess Ag from the absorber film. A solar cell and method for fabrication thereof are also provided.
- Research Organization:
- International Business Machines Corp., Armonk, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EE0006334
- Assignee:
- International Business Machines Corporation (Armonk, NY)
- Patent Number(s):
- 10,079,321
- Application Number:
- 15/198,795
- OSTI ID:
- 1482822
- Resource Relation:
- Patent File Date: 2016 Jun 30
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber
Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices