900 V / 200 A SiC Schottky Diode Fabrication on 150 mm Substrates
- GeneSiC Semiconductor Inc., Dulles, VA (United States)
Advanced electrothermal modeling was utilized to optimize the chip geometry for a given size, the layout and interconnection of multiple SiC dies on a DBC substrate. The Schottky MPS die were fabricated with double-side solderable Ag-based metallization, which enables a significantly reduced thermal resistance. This allows the die to run at a lower junction temperature, while also increasing the surge current capability. The automotive application readiness of the 900 V/200 A Schottky diodes were thoroughly investigated in Phase II, based on the Automotive Electronics Council’s (AEC) Stress Test Qualification for Automotive Grade Discrete Semiconductors (AEC-Q101, Rev. D1) and JEDEC’s Stress-Test-Driven Qualification of Integrated Circuits (JESD47-I). 900 V/400 A automotive qualified 3-phase inverter module were demonstrated, and the automotive qualified 900 V/200 A Schottky rectifiers are ready for next level of product insertion.
- Research Organization:
- GeneSiC Semiconductor Inc., Dulles, VA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Vehicle Technologies Office (EE-3V)
- Contributing Organization:
- GeneSiC Semiconductor Inc.
- DOE Contract Number:
- SC0013817
- OSTI ID:
- 1479640
- Type / Phase:
- SBIR (Phase II)
- Report Number(s):
- DOE-GeneSiC-0013817-1
- Resource Relation:
- Related Information: Datasheets of SiC Schottky Diodes developed/enabled by this program are available at http://www.genesicsemi.com/schottky-mps/
- Country of Publication:
- United States
- Language:
- English
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