High Current Silicon Carbide Schottky Diodes for Electric Drive Vehicle Power Electronics
Under Phase I and II of this contract, UnitedSiC completely developed a robust high yielding process at our 6inch SiC foundry for 650V, 200A and 1200V, 100A high current diodes. These diodes use an AEC-Q101 qualified process. The expectation that the high yields and 6inch foundry economics would allow reasonable costs for such diodes has been realized. We demonstrated the known advantages of pairing such diodes with IGBTs to reduce turn-on losses, especially at high temperatures. UnitedSiC also developed a special version of the SOT227 package to provide a platform to qualify these devices for typical module assembly ceramics, die attach, encapsulant and interconnects. Several cycles of qualification were completed, lessons learned and a full release will occur by the end of 2018. A more complete evaluation in a power module was conducted by TM4, using a custom designed Econodual style module. A great deal was learned from that exercise. When operating such high inductance modules for low inverter frequencies, using SiC diodes increased module output by about 10%, which does not justify the increased costs. In parallel, higher frequency markets have emerged in fast charging and wireless charging for these high current diodes, which will propel growth in US built SiC shipments.
- Research Organization:
- United Silicon Carbide, Inc.
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- SC0013845
- OSTI ID:
- 1480132
- Type / Phase:
- SBIR (Phase II)
- Report Number(s):
- DOE-USCi-SC0013845
- Country of Publication:
- United States
- Language:
- English
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