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Computational study of Fermi kinetics transport applied to large-signal RF device simulations

Journal Article · · Journal of Computational Electronics
 [1];  [2];  [3];  [4];  [5]
  1. Michigan State Univ., East Lansing, MI (United States). Dept. of Electrical and Computer Engineering; Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States). Sensors Directorate
  2. Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States). Sensors Directorate
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. Tech-X Corp., Boulder, CO (United States)
  5. Michigan State Univ., East Lansing, MI (United States). Dept. of Electrical and Computer Engineering
Here, a detailed description and analysis of the Fermi kinetics transport (FKT) equations for simulating charge transport in semiconductor devices is presented. The fully coupled nonlinear discrete FKT equations are elaborated, as well as solution methods and work-flow for the simulation of RF electronic devices under large-signal conditions. The importance of full-wave electromagnetics is discussed in the context of high-speed device simulation, and the meshing requirements to integrate the full-wave solver with the transport equations are given in detail. The method includes full semiconductor band structure effects to capture the scattering details for the Boltzmann transport equation. The method is applied to high-speed gallium nitride devices. Finally, numerical convergence and stability examples provide insight into the mesh convergence behavior of the deterministic solver.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); US Air Force Office of Scientific Research (AFOSR)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1472250
Report Number(s):
SAND--2018-9525J; 667464
Journal Information:
Journal of Computational Electronics, Journal Name: Journal of Computational Electronics Journal Issue: 4 Vol. 17; ISSN 1569-8025
Publisher:
SpringerCopyright Statement
Country of Publication:
United States
Language:
English

References (47)

Delaunay-Voronoi surface integration: a full-wave electromagnetics discretization for electronic device simulation: DVSI: A FULL-WAVE EM DISCRETIZATION FOR ELECTRONIC DEVICE SIMULATION
  • Miller, N. C.; Albrecht, J. D.; Grupen, M.
  • International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 29, Issue 5 https://doi.org/10.1002/jnm.2146
journal February 2016
Generation of oriented three-dimensional Delaunay grids suitable for the control volume integration method journal October 1994
Gmsh: A 3-D finite element mesh generator with built-in pre- and post-processing facilities journal September 2009
Tailoring unstructured meshes for use with a 3D time domain co-volume algorithm for computational electromagnetics journal July 2010
Improving the quality of meshes for the simulation of semiconductor devices using Lepp-based algorithms journal January 2003
Voronoi Diagrams and Delaunay Triangulations book January 2016
Two algorithms for constructing a Delaunay triangulation journal June 1980
The Monte Carlo method journal February 1977
Constrained delaunay triangulations journal June 1989
Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AlGaN/GaN HEMTs journal October 2004
Electrothermal analysis of AlGaN/GaN high electron mobility transistors journal February 2008
Energy transport model with full band structure for GaAs electronic devices journal May 2011
Series expansion of the Fermi-Dirac integral over the entire domain of real j and x journal February 1993
A stitching method for the generation of unstructured meshes for use with co-volume solution techniques journal February 2006
Advances in co-volume mesh generation and mesh optimisation techniques journal March 2017
Hydrodynamic simulation of surface traps in the AlGaN/GaN HEMT journal March 2009
Cell polarisation in a bulk-surface model can be driven by both classic and non-classic Turing instability journal February 2021
An alternative treatment of heat flow for charge transport in semiconductor devices journal December 2009
Multiphysics simulation of high-frequency carrier dynamics in conductive materials journal September 2011
Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors journal July 2017
The Monte Carlo Method journal September 1949
Computing Dirichlet tessellations journal February 1981
Computing the n-dimensional Delaunay tessellation with application to Voronoi polytopes journal February 1981
Diffusion of Hot and Cold Electrons in Semiconductor Barriers journal June 1962
Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects journal November 1988
Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors journal January 2000
Mixed element trees: a generalization of modified octrees for the generation of meshes for the simulation of complex 3-D semiconductor device structures
  • Hitschfeld, N.; Conti, P.; Fichtner, W.
  • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 12, Issue 11 https://doi.org/10.1109/43.248082
journal January 1993
Omega -an octree-based mixed element grid allocator for the simulation of complex 3-D device structures
  • Conti, P.; Hitschfeld, N.; Fichtner, W.
  • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 10, Issue 10 https://doi.org/10.1109/43.88919
journal January 1991
Full-wave hydrodynamic model for predicting THz emission from grating-gate RTD-gated plasma wave HEMTs conference June 2015
A review of hydrodynamic and energy-transport models for semiconductor device simulation journal February 2003
Temperature- and Doping-Dependent Anisotropic Stationary Electron Velocity in Wurtzite GaN journal November 2011
Modeling and Simulation of Terahertz Devices journal November 2012
Large-signal analysis of a silicon Read diode oscillator journal January 1969
Transport equations for electrons in two-valley semiconductors journal January 1970
Finite boxes—A generalization of the finite-difference method suitable for semiconductor device simulation journal September 1983
Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method journal December 2006
Influence of the Source–Gate Distance on the AlGaN/GaN HEMT Performance journal May 2007
Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors journal January 2010
Electrothermal Monte Carlo Simulation of GaN HEMTs Including Electron–Electron Interactions journal March 2010
Physics-Based Modeling of GaN HEMTs journal March 2012
The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs journal May 2012
Three-Dimensional Full-Wave Electromagnetics and Nonlinear Hot Electron Transport With Electronic Band Structure for High-Speed Semiconductor Device Simulation journal December 2014
Centroidal Voronoi Tessellations: Applications and Algorithms journal January 1999
Qualitative Behavior of Solutions of a Degenerate Nonlinear Drift-Diffusion Model for Semiconductors journal June 1995
Voronoi diagrams---a survey of a fundamental geometric data structure journal September 1991
TetGen, a Delaunay-Based Quality Tetrahedral Mesh Generator journal February 2015
Constrained Delaunay triangulations conference January 1987

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