A Semiconductor Device Noise Model: A Deterministic Approach to Semiconductor Device Current Noise for Semiclassical Transport
Journal Article
·
· AIP Conference Proceedings
- Department of Electrical and Computer Engineering, George Washington University, 725 23rd ST Washington, DC 20052 (United States)
In this paper, we present a deterministic approach to calculate terminal current noise characteristics in semiconductor devices in the framework of semiclassical transport based on the spherical harmonics of the Boltzmann Transport Equation. The model relies on the solution of the Boltzmann equation in the frequency domain with special initial and boundary conditions. The terminal current fluctuation is directly related to scattering without the additional Langevin noise term added to the calculation. Simulation results are presented for the terminal current spectral density for a 1-D n{sup +}nn{sup +} structure due to elastic-acoustic and intervally scattering.
- OSTI ID:
- 21304857
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1129; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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