Ultrafast Graphene Light Emitters
- Kyung Hee Univ., Seoul (Korea). Dept. of Physics
- Columbia Univ., New York, NY (United States). Dept. of Mechanical Engineering
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science
- Kavli Inst. at Cornell for Nanoscale Science, Ithaca, New York
- Stanford Univ., CA (United States). Dept. of Applied Physics; SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Korea Research Inst. of Standards and Science, Daejeon (Korea); Univ. of Science and Technology, Daejeon (Korea). Dept. of Nano Science
- Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering
- Yonsei Univ., Seoul (Korea). Dept. of Materials Science and Engineering
- Univ. of Minnesota, Minneapolis, MN (United States). Dept. of Electrical and Computer Engineering
- Columbia Univ., New York, NY (United States). Dept. of Mechanical Engineering; Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering
- National Inst. for Materials Science, Namiki, Tsukuba (Japan)
Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here in this paper, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge-carrier dynamics in graphene and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460% enhancement compared to the gray-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2000 K under ambient conditions as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes under electrical excitation. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0001088
- OSTI ID:
- 1470431
- Journal Information:
- Nano Letters, Vol. 18, Issue 2; Related Information: CE partners with Massachusetts Institute of Technology (lead); Brookhaven National Laboratory; Harvard University; ISSN 1530-6984
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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Related Subjects
42 ENGINEERING
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
77 NANOSCIENCE AND NANOTECHNOLOGY
Graphene
ultrafast light emitter
thermal radiation
van der Waals heterostructure
optoelectronics
solar (photovoltaic)
solid state lighting
photosynthesis (natural and artificial)
charge transport
optics
synthesis (novel materials)
synthesis (self-assembly)
synthesis (scalable processing)