Robust Multicolor Single Photon Emission from Point Defects in Hexagonal Boron Nitride

Tran, Toan Trong; Elbadawi, Christopher; Totonjian, Daniel; Lobo, Charlene J.; Grosso, Gabriele; Moon, Hyowon; Englund, Dirk R.; Ford, Michael J.; Aharonovich, Igor; Toth, Milos

doi:10.1021/acsnano.6b03602

Robust Multicolor Single Photon Emission from Point Defects in Hexagonal Boron Nitride

Journal Article · Mon Jul 11 00:00:00 EDT 2016 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.6b03602· OSTI ID:1388284

Tran, Toan Trong ^[1]; Elbadawi, Christopher ^[1]; Totonjian, Daniel ^[1]; Lobo, Charlene J. ^[1]; Grosso, Gabriele ^[2]; Moon, Hyowon ^[2]; Englund, Dirk R. ^[2]; Ford, Michael J. ^[1]; Aharonovich, Igor ^[1]; Toth, Milos ^[1]

Univ. of Technology Sydney, Ultimo, NSW (Australia). School of Mathematical and Physical Sciences
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science

Hexagonal boron nitride (hBN) is an emerging two-dimensional material for quantum photonics owing to its large bandgap and hyperbolic properties. We report two approaches for engineering quantum emitters in hBN multilayers using either electron beam irradiation or annealing and characterize their photophysical properties. The defects exhibit a broad range of multicolor room-temperature single photon emissions across the visible and the near-infrared spectral ranges, narrow line widths of sub-10 nm at room temperature, and a short excited-state lifetime, and high brightness. We show that the emitters can be categorized into two general groups, but most likely possess similar crystallographic structure. Remarkably, the emitters are extremely robust and withstand aggressive annealing treatments in oxidizing and reducing environments. Our results constitute a step toward deterministic engineering of single emitters in 2D materials and hold great promise for the use of defects in boron nitride as sources for quantum information processing and nanophotonics.

View Accepted Manuscript (DOE)

Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0001088

OSTI ID:: 1388284

Journal Information:: ACS Nano, Journal Name: ACS Nano Journal Issue: 8 Vol. 10; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Radiation tolerance of two-dimensional material-based devices for space applications Vogl, Tobias; Sripathy, Kabilan; Sharma, Ankur Zenodo https://doi.org/10.5281/zenodo.2584404	text	January 2019
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