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Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride

Journal Article · · Nature Communications
 [1];  [2];  [2];  [3];  [2];  [4];  [4];  [3];  [3];  [2]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science; None
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science
  3. Univ. of Technology Sydney, Ultimo, NSW (Australia). School of Mathematical and Physical Sciences
  4. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics
Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single photon purity. We observe high single photon count rates exceeding 7 × 106 counts per second at saturation, after correcting for uncorrelated photon background. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.
Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Organization:
Australian Research Council (ARC); National Science Foundation (NSF); Swiss National Science Foundation (SNSF); US Army Research Laboratory (USARL); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0001088
OSTI ID:
1425973
Journal Information:
Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 8; ISSN 2041-1723
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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Cited By (50)

Atomic localization of quantum emitters in multilayer hexagonal boron nitride journal January 2019
Integration of Single-Photon Emitters in 2D Materials with Plasmonic Waveguides at Room Temperature journal August 2020
Quantum Materials with Atomic Precision: Artificial Atoms in Solids: Ab Initio Design, Control, and Integration of Single Photon Emitters in Artificial Quantum Materials journal September 2019
Selective Defect Formation in Hexagonal Boron Nitride journal May 2019
Large Photothermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam journal April 2018
Spin coherence in two-dimensional materials journal April 2019
Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide journal February 2018
Controlling the optical properties of carbon nanotubes with organic colour-centre quantum defects journal June 2019
Material platforms for spin-based photonic quantum technologies journal April 2018
Photonics with hexagonal boron nitride journal July 2019
2D materials for quantum information science journal August 2019
Superior properties in room-temperature colloidal-dot quantum emitters revealed by ultralow-dark-count detections of temporally-purified single photons journal November 2019
Dynamically tuned non-classical light emission from atomic defects in hexagonal boron nitride journal September 2019
A reliable procedure for the preparation of graphene-boron nitride superlattices as large area (cm × cm) films on arbitrary substrates or powders (gram scale) and unexpected electrocatalytic properties journal January 2019
Defect creation in WSe 2 with a microsecond photoluminescence lifetime by focused ion beam irradiation journal January 2020
Electrically tunable quantum emitters in an ultrathin graphene–hexagonal boron nitride van der Waals heterostructure journal February 2019
Acoustically modulated optical emission of hexagonal boron nitride layers journal April 2019
Suppression of spectral diffusion by anti-Stokes excitation of quantum emitters in hexagonal boron nitride journal August 2019
Coupled alkali halide color centers: Fractional charge errors, fractional spin errors, and a failure of spin symmetry breaking produce challenging tests for condensed-phase electronic structure calculations journal August 2019
III–V compounds as single photon emitters journal July 2019
Flow modulation epitaxy of hexagonal boron nitride journal August 2018
Phonon-assisted emission and absorption of individual color centers in hexagonal boron nitride journal April 2019
Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride journal January 2020
Realization of a causal-modeled delayed-choice experiment using single photons journal July 2019
Very Large and Reversible Stark-Shift Tuning of Single Emitters in Layered Hexagonal Boron Nitride journal April 2019
Carrier recombination mechanism at defects in wide band gap two-dimensional materials from first principles journal August 2019
Solid-state single photon source with Fourier transform limited lines at room temperature journal February 2020
Substrate effects on charged defects in two-dimensional materials journal August 2019
Shallow and deep levels in carbon-doped hexagonal boron nitride crystals journal September 2019
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Direct measurement of quantum efficiency of single-photon emitters in hexagonal boron nitride journal January 2019
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New insights into nonclassical light emission from defects in multi-layer hexagonal boron nitride journal July 2019
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Quantum defects by design journal October 2019
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