Discretized hexagonal boron nitride quantum emitters and their chemical interconversion

Kozawa, Daichi; Li, Sylvia Xin; Ichihara, Takeo; Rajan, Ananth Govind; Gong, Xun; He, Guangwei; Koman, Volodymyr B.; Zeng, Yuwen; Kuehne, Matthias; Silmore, Kevin S.; Parviz, Dorsa; Liu, Pingwei; Liu, Albert Tianxiang; Faucher, Samuel; Yuan, Zhe; Warner, Jamie; Blankschtein, Daniel; Strano, Michael S.

doi:10.1088/1361-6528/aca984

Discretized hexagonal boron nitride quantum emitters and their chemical interconversion

Journal Article · Mon Jan 02 23:00:00 EST 2023 · Nanotechnology

DOI:https://doi.org/10.1088/1361-6528/aca984· OSTI ID:2419481

Kozawa, Daichi ^[1]; Li, Sylvia Xin ^[2]; Ichihara, Takeo ^[3]; Rajan, Ananth Govind ^[4]; ^[2]; He, Guangwei ^[2]; Koman, Volodymyr B. ^[2]; Zeng, Yuwen ^[2]; Kuehne, Matthias ^[2]; Silmore, Kevin S. ^[2]; Parviz, Dorsa ^[2]; Liu, Pingwei ^[5]; Liu, Albert Tianxiang ^[6]; Faucher, Samuel ^[2]; Yuan, Zhe ^[2]; Warner, Jamie ^[7]; Blankschtein, Daniel ^[2]; ^[2]

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); RIKEN, Saitama (Japan); OSTI
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Asahi Kasei Corporation, Kurashiki, Okayama (Japan)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Indian Institute of Science (IIS), Bengaluru, Karnataka (India)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Zhejiang Univ., Hangzhou (China)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Univ. of Michigan, Ann Arbor, MI (United States)
Univ. of Texas, Austin, TX (United States)

Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are of significant interest because of their unique photophysical properties, such as single-photon emission at room temperature, and promising applications in quantum computing and communications. The photoemission from hBN defects covers a wide range of emission energies but identifying and modulating the properties of specific emitters remain challenging due to uncontrolled formation of hBN defects. In this study, more than 2000 spectra are collected consisting of single, isolated zero-phonon lines (ZPLs) between 1.59 and 2.25 eV from diverse sample types. Most of ZPLs are organized into seven discretized emission energies. All emitters exhibit a range of lifetimes from 1 to 6 ns, and phonon sidebands offset by the dominant lattice phonon in hBN near 1370 cm^-1. Two chemical processing schemes are developed based on water and boric acid etching that generate or preferentially interconvert specific emitters, respectively. The identification and chemical interconversion of these discretized emitters should significantly advance the understanding of solid-state chemistry and photophysics of hBN quantum emission.

View Accepted Manuscript (DOE)

Research Organization:: Krell Institute, Ames, IA (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC); Army Research Office; National Science Foundation

Grant/Contract Number:: FG02-97ER25308

OSTI ID:: 2419481

Journal Information:: Nanotechnology, Journal Name: Nanotechnology Journal Issue: 11 Vol. 34; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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