Amphoteric doping of Si in InAlAs/InGaAs/InP(311)A heterostructures grown by molecular-beam epitaxy
- Columbia Univ., New York, NY (United States)
- AT&T Bell Lab., Murray Hill, NJ (United States); and others
High-quality InAlAs/InGaAs/InP modulation-doped field effect transistor (MODFET) structures were grown using silicon as an n-type dopant on the (311)A orientation for the first time by the planar-doping technique in molecular-beam epitaxy. An electron mobility as high as 50 000 cm{sup 2}/V s with a sheet carrier concentration of 1.9x10{sup 12}/cm{sup 2} at 77 K is achieved. MODFETs with 1.2 {mu}m gate length exhibit an extrinsic transconductance of 400 mS/mm and a maximum drain current of 485 mA/mm. The results are comparable to that of MODFETs grown on (100) InP substrates. Our results point to the new possibility of making p-n multilayer structures with all-silicon doping. 11 refs., 5 figs.
- OSTI ID:
- 147041
- Report Number(s):
- CONF-9210296--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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