Amphoteric doping of Si in InAlAs/InGaAs/InP(311)A heterostructures grown by molecular-beam epitaxy

Journal Article · Sat May 01 00:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586737· OSTI ID:147041

Li, X; Wang, W I ^[1]; Cho, A Y ^[2]

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1. Columbia Univ., New York, NY (United States)
2. AT&T Bell Lab., Murray Hill, NJ (United States); and others

High-quality InAlAs/InGaAs/InP modulation-doped field effect transistor (MODFET) structures were grown using silicon as an n-type dopant on the (311)A orientation for the first time by the planar-doping technique in molecular-beam epitaxy. An electron mobility as high as 50 000 cm{sup 2}/V s with a sheet carrier concentration of 1.9x10{sup 12}/cm{sup 2} at 77 K is achieved. MODFETs with 1.2 {mu}m gate length exhibit an extrinsic transconductance of 400 mS/mm and a maximum drain current of 485 mA/mm. The results are comparable to that of MODFETs grown on (100) InP substrates. Our results point to the new possibility of making p-n multilayer structures with all-silicon doping. 11 refs., 5 figs.

• OSTI ID: 147041
• Report Number(s): CONF-9210296-; ISSN 0734-211X; TRN: 95:007540-0049
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHYSICAL PROPERTIES
CRYSTAL GROWTH
INDIUM ARSENIDES
ALUMINIUM ARSENIDES
DOPED MATERIALS
SILICON
ELECTRON MOBILITY
ORIENTATION
N-TYPE CONDUCTORS
CRYSTAL STRUCTURE