Interface and relaxation properties of chemical beam epitaxy grown GaP/GaAs structures
- Univ. of Houston, TX (United States)
In this work, the influence of phosphorus exposure on As-stabilized GaAs(100) surfaces over a temperature range between 500 580 {degrees}C is studied using a combination of reflection high-energy electron reflection (RHEED) and x-ray diffraction analysis. Through x-ray wave field analysis, it is found that 1 ML of GaP is formed during phosphorus exposure of an As-stabilized (2x4) GaAs surface. Furthermore, relaxation properties of GaP/GaAs(100) (3.8% lattice mismatch), grown by chemical beam epitaxy, are investigated using real-time RHEED oscillation analysis. Although RHEED analysis suggests that the GaP critical thickness, where the onset of relaxation occurs, increases at lower temperatures, x-ray diffraction data indicate a constant critical thickness of 5 ML in the temperature range covered in this study. 14 refs., 5 figs.
- OSTI ID:
- 147022
- Report Number(s):
- CONF-9210296--; CNN: Grant NAGW 977
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
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