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Title: Green, stable and earth abundant ionic PV absorbers based on chalcogenide perovskite

Abstract

Searching for inexpensive, environment-friendly, and air-stable absorber materials for thin film solar cells has become a key thrust of PV research. Supported by this one-year award, the UB-RPI team aims to develop a novel class of semiconductors — chalcogenide perovskites. Sharing some similarities to the widely researched halide perovskites, and unlike most conventional semiconductors, the chalcogenide perovskites are strongly ionic. Such characteristics is expected to provide intrinsic defect properties favorable for charge transport in PV absorbers. In this one-year project, we confirmed structural stability of the BaZrS 3 material through high pressure Raman studies. We find no evidence that the perovskite structure of BaZrS 3 undergoes any phase changes under hydrostatic pressure to at least 8.9 GPa. Our results indicate the robust structural stability of BaZrS 3, and suggest cation alloying as a viable approach for band-gap engineering for photovoltaic and other applications. We also achieved reduced band gap to 1.45 eV by Ti-alloying of BaZrS 3, which is close to the optimal value for a single junction solar cell. We further synthesized BaZrS 3 thin films with desired crystal structure and band gap. The optical absorption is high as expected. The carrier mobility is moderate. The high processing temperaturemore » limits its ability for device integration. We are working on deposition of chalcogenide perovskite thin films using molecular beam epitaxy.« less

Authors:
 [1]
  1. Univ. at Buffalo, Buffalo, NY (United States)
Publication Date:
Research Org.:
State Univ. of New York (SUNY), Univ. at Buffalo, Buffalo, NY (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1437248
Report Number(s):
Final report: DOE-Buffalo-7364-1
DOE Contract Number:  
EE0007364
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Zeng, Hao. Green, stable and earth abundant ionic PV absorbers based on chalcogenide perovskite. United States: N. p., 2018. Web. doi:10.2172/1437248.
Zeng, Hao. Green, stable and earth abundant ionic PV absorbers based on chalcogenide perovskite. United States. doi:10.2172/1437248.
Zeng, Hao. Wed . "Green, stable and earth abundant ionic PV absorbers based on chalcogenide perovskite". United States. doi:10.2172/1437248. https://www.osti.gov/servlets/purl/1437248.
@article{osti_1437248,
title = {Green, stable and earth abundant ionic PV absorbers based on chalcogenide perovskite},
author = {Zeng, Hao},
abstractNote = {Searching for inexpensive, environment-friendly, and air-stable absorber materials for thin film solar cells has become a key thrust of PV research. Supported by this one-year award, the UB-RPI team aims to develop a novel class of semiconductors — chalcogenide perovskites. Sharing some similarities to the widely researched halide perovskites, and unlike most conventional semiconductors, the chalcogenide perovskites are strongly ionic. Such characteristics is expected to provide intrinsic defect properties favorable for charge transport in PV absorbers. In this one-year project, we confirmed structural stability of the BaZrS3 material through high pressure Raman studies. We find no evidence that the perovskite structure of BaZrS3 undergoes any phase changes under hydrostatic pressure to at least 8.9 GPa. Our results indicate the robust structural stability of BaZrS3, and suggest cation alloying as a viable approach for band-gap engineering for photovoltaic and other applications. We also achieved reduced band gap to 1.45 eV by Ti-alloying of BaZrS3, which is close to the optimal value for a single junction solar cell. We further synthesized BaZrS3 thin films with desired crystal structure and band gap. The optical absorption is high as expected. The carrier mobility is moderate. The high processing temperature limits its ability for device integration. We are working on deposition of chalcogenide perovskite thin films using molecular beam epitaxy.},
doi = {10.2172/1437248},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {5}
}