Strain effects on domain structures in ferroelectric thin films from phase‐field simulations

Lin, Fang‐Yin; Cheng, Xiaoxing; Chen, Long‐Qing; Sinnott, Susan B.

doi:10.1111/jace.15705

Strain effects on domain structures in ferroelectric thin films from phase‐field simulations

Journal Article · Mon Apr 30 00:00:00 EDT 2018 · Journal of the American Ceramic Society

DOI:https://doi.org/10.1111/jace.15705· OSTI ID:1435396

^[1]; Cheng, Xiaoxing ^[2]; Chen, Long‐Qing ^[2]; Sinnott, Susan B. ^[2]

Department of Materials Science and Engineering The University of Florida Gainesville Florida, Department of Materials Science and Engineering The Pennsylvania State University University Park Pennsylvania
Department of Materials Science and Engineering The Pennsylvania State University University Park Pennsylvania

Abstract

Strain and applied external electric fields are known to influence domain evolution and associated ferroelectric responses in ferroelectric thin films. Here, phase‐field simulations are used to predict equilibrium domain structures and polarization‐field ( P ‐ E ) hysteresis loops of lead zirconate titanate (PZT) thin films under a series of mismatch strains, ranging from strongly tensile to strongly compressive. In particular, the evolution of domains and the P ‐ E curves under different applied strains reveal the mesoscale mechanism, the appearance of in‐plane polarization during domain switching, that is responsible for a relatively small coercive field and remnant polarization. A Landau energy distribution is analyzed to better understand the domain evolution under various strain conditions. The results provide guidance for choice of mismatched strains to yield the desired P ‐ E hysteresis loops and the domain structures.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

OSTI ID:: 1435396

Journal Information:: Journal of the American Ceramic Society, Journal Name: Journal of the American Ceramic Society Journal Issue: 10 Vol. 101; ISSN 0002-7820

Publisher:: Wiley-BlackwellCopyright Statement

Country of Publication:: United States

Language:: English

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