Influence of interfacial dislocations on hysteresis loops of ferroelectric films

Journal Article · Fri Nov 14 23:00:00 EST 2008 · Journal of Applied Physics, 104(10):104110

DOI:https://doi.org/10.1063/1.3021354· OSTI ID:964233

Li, Yulan; Hu, Shenyang Y; Choudhury, S; Baskes, Michael I; Saxena, A; Lookman, T; Jia, Q X; Schlom, Darrell G; Chen, L Q

We investigated the influence of dislocations, located at the interface of a ferroelectric film and its underlying substrate, on the ferroelectric hysteresis loop including the remanent polarization and coercive field using phase-field simulations. We considered epitaxial ferroelectric BaTiO3 films and found that the hysteresis loop is strongly dependent on the type and density of interfacial dislocations. The dislocations that stabilize multiple ferroelectric variants and domains reduce the coercive field, and consequently, the corresponding remanent polarization also decreases.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 964233
• Report Number(s): PNNL-SA-64608
• Journal Information: Journal of Applied Physics, 104(10):104110, Journal Name: Journal of Applied Physics, 104(10):104110 Journal Issue: 10 Vol. 104; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM OXIDES
DISLOCATIONS
FERROELECTRIC MATERIALS
FILMS
HYSTERESIS
INTERFACES
POLARIZATION
SUBSTRATES
TITANIUM OXIDES