Fabrication of ultrathin film capacitors by chemical solution deposition

Brennecka, Geoff L.; Tuttle, Bruce A.

doi:10.1557/JMR.2007.0371

Fabrication of ultrathin film capacitors by chemical solution deposition

Journal Article · Mon Oct 01 00:00:00 EDT 2007 · Journal of Materials Research

DOI:https://doi.org/10.1557/JMR.2007.0371· OSTI ID:1426946

Brennecka, Geoff L. ^[1]; Tuttle, Bruce A. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We present that a facile solution-based processing route using standard spin-coating deposition techniques has been developed for the production of reliable capacitors based on lead lanthanum zirconate titanate (PLZT) with active areas of ≥1 mm² and dielectric layer thicknesses down to 50 nm. With careful control of the dielectric phase development through improved processing, ultrathin capacitors exhibited slim ferroelectric hysteresis loops and dielectric constants of >1000, similar to those of much thicker films. Furthermore, it has been demonstrated that chemical solution deposition is a viable route to the production of capacitor films which are as thin as 50 nm but are still macroscopically addressable with specific capacitance values >160 nF/mm².

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1426946

Alternate ID(s):: OSTI ID: 1147461

Report Number(s):: SAND--2007-1882J; 526863

Journal Information:: Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 10 Vol. 22; ISSN 0884-2914; ISSN applab

Publisher:: Materials Research SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited By (5)

Chemical solution growth of ferroelectric oxide thin films and nanostructures Bassiri-Gharb, Nazanin; Bastani, Yaser; Bernal, Ashley Chem. Soc. Rev., Vol. 43, Issue 7 https://doi.org/10.1039/c3cs60250h	journal	January 2014
Enhanced alkaline stability in a hafnium-substituted NaSICON ion conductor Small, Leo J.; Wheeler, Jill S.; Ihlefeld, Jon F. Journal of Materials Chemistry A, Vol. 6, Issue 20 https://doi.org/10.1039/c7ta09924j	journal	January 2018
Bulk-like dielectric properties from metallo-organic solution–deposited SrTiO 3 films on Pt-coated Si substrates Weiss, C. V.; Zhang, J.; Spies, M. Journal of Applied Physics, Vol. 111, Issue 5 https://doi.org/10.1063/1.3692811	journal	March 2012
Processing Technologies for High-Permittivity Thin Films in Capacitor Applications: Processing Technologies for Thin Films in Capacitor Applications Brennecka, Geoff L.; Ihlefeld, Jon F.; Maria, Jon-Paul Journal of the American Ceramic Society, Vol. 93, Issue 12 https://doi.org/10.1111/j.1551-2916.2010.04211.x	journal	December 2010
Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations Ihlefeld, Jon F.; Harris, David T.; Keech, Ryan Journal of the American Ceramic Society, Vol. 99, Issue 8 https://doi.org/10.1111/jace.14387	journal	July 2016

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