Thin-film decoupling capacitors for multi-chip modules

Title: Thin-film decoupling capacitors for multi-chip modules

Full Record
Other Related Research

Abstract

Thin-film decoupling capacitors based on ferroelectric lead lanthanum zirconate titanate (PLZT) films are being developed for use in advanced packages, such as multi-chip modules. These thin-film decoupling capacitors are intended to replace multi-layer ceramic capacitors for certain applications, since they can be more fully integrated into the packaging architecture. The increased integration that can be achieved should lead to decreased package volume and improved high-speed performance, due to a decrease in interconnect inductance. PLZT films are fabricated by spin coating using metal carboxylate/alkoxide solutions. These films exhibit very high dielectric constants ({var_epsilon} {ge} 900), low dielectric losses (tan{delta} = 0.01), excellent insulation resistances ({rho} > 10{sup 13} {Omega}-cm at 125{degrees}C), and good breakdown field strengths (E{sub B} = 900 kV/cm). For integrated circuit applications, the PLZT dielectric is less than 1 {mu}m thick, which results in a large capacitance/area (8--9 nF/mm{sup 2}). The thin-film geometry and processing conditions also make these capacitors suitable for direct incorporation onto integrated circuits and for packages that require embedded components.

Authors:: Schwartz, R W; Rodgers, M S

Publication Date:: 1994-03-01

Research Org.:: Sandia National Labs., Albuquerque, NM (United States)

Sponsoring Org.:: USDOE, Washington, DC (United States)

OSTI Identifier:: 10130957

Report Number(s):: SAND-94-0163C; CONF-940596-2
ON: DE94007743; BR: GB0103012

DOE Contract Number:: AC04-94AL85000

Resource Type:: Conference

Resource Relation:: Conference: 44. electronic components and technology conference,Washington, DC (United States),1-4 May 1994; Other Information: PBD: [1994]

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; 36 MATERIALS SCIENCE; CAPACITORS; FABRICATION; PLZT; DIELECTRIC PROPERTIES; SOL-GEL PROCESS; INTEGRATED CIRCUITS; THIN FILMS; PERMITTIVITY; 426000; 360104; COMPONENTS, ELECTRON DEVICES AND CIRCUITS; PHYSICAL PROPERTIES

Citation Formats


                    Dimos, D.: Lockwood, S.J., Schwartz, R W, and Rodgers, M S. Thin-film decoupling capacitors for multi-chip modules.  United States: N. p., 1994. 
        Web.

Copy to clipboard


                    Dimos, D.: Lockwood, S.J., Schwartz, R W, & Rodgers, M S. Thin-film decoupling capacitors for multi-chip modules.  United States.

Copy to clipboard


                    Dimos, D.: Lockwood, S.J., Schwartz, R W, and Rodgers, M S. Tue .  
        "Thin-film decoupling capacitors for multi-chip modules".  United States.  https://www.osti.gov/servlets/purl/10130957.

Copy to clipboard


                    
@article{osti_10130957,

  title        = {Thin-film decoupling capacitors for multi-chip modules},

  author       = {Dimos, D.: Lockwood, S.J. and Schwartz, R W and Rodgers, M S},

  abstractNote = {Thin-film decoupling capacitors based on ferroelectric lead lanthanum zirconate titanate (PLZT) films are being developed for use in advanced packages, such as multi-chip modules. These thin-film decoupling capacitors are intended to replace multi-layer ceramic capacitors for certain applications, since they can be more fully integrated into the packaging architecture. The increased integration that can be achieved should lead to decreased package volume and improved high-speed performance, due to a decrease in interconnect inductance. PLZT films are fabricated by spin coating using metal carboxylate/alkoxide solutions. These films exhibit very high dielectric constants ({var_epsilon} {ge} 900), low dielectric losses (tan{delta} = 0.01), excellent insulation resistances ({rho} > 10{sup 13} {Omega}-cm at 125{degrees}C), and good breakdown field strengths (E{sub B} = 900 kV/cm). For integrated circuit applications, the PLZT dielectric is less than 1 {mu}m thick, which results in a large capacitance/area (8--9 nF/mm{sup 2}). The thin-film geometry and processing conditions also make these capacitors suitable for direct incorporation onto integrated circuits and for packages that require embedded components.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/10130957},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1994},

  month        = {3}

}

Copy to clipboard

Conference:

View Conference (0.85 MB)

Other availability

Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

Development and integration of applique decoupling capacitors

Conference Garino, T J ; Dimos, D ; Lockwood, S J

For high-speed integrated circuit applications, it is important to interconnect decoupling capacitors and integrated circuits (ICs) as intimately as possible, to minimize parasitic impedances. This can be achieved by mounting free-standing, thin film capacitors directly onto ICs as part of a chip-scale packaging approach. These applique capacitors utilize a chemically-prepared PLZT dielectric, which is nominally 1 {micro}m thick. The small size and weight of applique capacitors can be used to improve packaging efficiency. Applique capacitors, which are initially fabricated on silicon wafers, have high permittivity ({var_epsilon} {approx_equal} 1,000), low loss (tan{delta} {approx_equal} 0.01) and high breakdown strength (E{sub b} {approx_equal}more »« less
Full Text Available
Fabrication of ultrathin film capacitors by chemical solution deposition

Journal Article Brennecka, Geoff L. ; Tuttle, Bruce A. - Journal of Materials Research

We present that a facile solution-based processing route using standard spin-coating deposition techniques has been developed for the production of reliable capacitors based on lead lanthanum zirconate titanate (PLZT) with active areas of ≥1 mm ² and dielectric layer thicknesses down to 50 nm. With careful control of the dielectric phase development through improved processing, ultrathin capacitors exhibited slim ferroelectric hysteresis loops and dielectric constants of >1000, similar to those of much thicker films. Furthermore, it has been demonstrated that chemical solution deposition is a viable route to the production of capacitor films which are as thin as 50 nmmore »« less
Cited by 32
https://doi.org/10.1557/JMR.2007.0371

Full Text Available
Integrated decoupling capacitors using Pb(Zr,Ti)O{sub 3} thin films

Conference Dimos, D ; Lockwood, S J ; Garino, T J ; ...

Thin-film decoupling capacitors based on ferroelectric PLZT (PbLaZrTiO{sub 3}) films are being developed for advanced packaging. The increased integration that can be achieved by replacing surface- mount capacitors should lead to decreased package volume and improved high-speed performance. For this application, chemical solution deposition is an appropriate fabrication technique since it is a low- cost, high-throughput process. Relatively thick Pt electrodes (1{mu}m) are used to minimize series resistance and inductance in fabricating these devices. Also, important electrical properties are discussed, with emphasis on lifetime measurements, which suggest that resistance degradation will not be a severe limitation on device performance. Finally,more »« less
Full Text Available
Sol-gel synthesis of high-quality SrRuO{sub 3} thin film electrodes suppressing the formation of detrimental RuO{sub 2} and the dielectric properties of integrated lead lanthanum zirconate titanate films.

Journal Article Narayanan, M ; Tong, S ; Koritala, R ; ... - Chem. Mater.

A facile solution chemistry is demonstrated to fabricate high-quality polycrystalline strontium ruthenium oxide (SrRuO{sub 3}) thin film electrodes on silicon substrates suppressing the formation of undesired ruthenium oxide (RuO{sub 2}) for the deposition of dielectric and ferroelectric materials like lead lanthanum zirconate titanate (PLZT). The robust, highly crystalline SrRuO{sub 3} film fabrication process does not favor the formation of RuO{sub 2} because of molecular level modification of the precursors possessing analogous melting points, yielding homogeneous films. This chemistry is further understood and complemented by kinetic and thermodynamic analysis of the DTA data under nonisothermal conditions, with which the activation energiesmore »« less
https://doi.org/10.1021/cm102136f
Lead zirconate titanate thin films on base-metal foils : an apporach for embedded high-permittivity passive components.

Journal Article Maria, J -P ; Cheek, K ; Streiffer, S K ; ... - J. Am. Ceram. Soc.

An approach for embedding high-permittivity dielectric thin films into glass epoxy laminate packages has been developed. Lead lanthanum zirconate titanate (Pb{sub 0.85}La{sub 0.15}-(Zr{sub 0.52}Ti{sub 0.48}){sub 0.96}O{sub 3}, PLZT) thin films were prepared using chemical solution deposition on nickel-coated copper foils that were 50 {mu}m thick. Sputter-deposited nickel top electrodes completed the all-base-metal capacitor stack. After high-temperature nitrogen-gas crystallization anneals, the PLZT composition showed no signs of reduction, whereas the base-metal foils remained flexible. The capacitance density was 300-400 nF/cm2, and the loss tangent was 0.01-0.02 over a frequency range of 1-1000 kHz. These properties represent a potential improvement of 2-3more »« less
https://doi.org/10.1111/j.1151-2916.2001.tb01029.x

Similar Records