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Title: Quasiballistic quantum transport through Ge/Si core/shell nanowires

Journal Article · · Nanotechnology
ORCiD logo [1];  [2];  [2];  [3];  [1]
  1. Univ. of Pittsburgh, PA (United States)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Univ. of California, San Diego, CA (United States)

We study signatures of ballistic quantum transport of holes through Ge/Si core/shell nanowires at low temperatures. We observe Fabry–Pérot interference patterns as well as conductance plateaus at integer multiples of 2e 2/h at zero magnetic field. Magnetic field evolution of these plateaus reveals relatively large effective Landé g-factors. Ballistic effects are observed in nanowires with silicon shell thickness of 1–3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic sub-band-resolved transport.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC52-06NA25396
OSTI ID:
1425762
Report Number(s):
LA-UR-17-26870
Journal Information:
Nanotechnology, Vol. 28, Issue 38; ISSN 0957-4484
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

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Cited By (3)

Josephson Effect in a Few-Hole Quantum Dot journal September 2018
Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric journal June 2019
Single layer MoS 2 nanoribbon field effect transistor journal January 2019

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