Hole mobility in Ge/Si core/shell nanowires: What could be the optimum?
- Univ. Grenoble Alpes, INAC-SP2M, L-Sim, Grenoble, France and CEA, INAC-SP2M, L-Sim, Grenoble (France)
- Laboratoire de la Matière Condensée et de Nanosciences, Faculté des Sciences, Université de Monastir, Monastir (Tunisia)
- IEMN - Department ISEN, UMR CNRS 8520, Lille (France)
Recent experimental works have shown that Ge/Si core/shell nanowires (NWs) are very attractive for nanoelectronics and for low-temperature quantum devices, thanks to the confinement of holes in the Ge core. Reported hole mobilities of the order of 200 cm{sup 2}/V/s are promising for high-performance field-effect transistors. However, we demonstrate that mobilities more than ten times higher, up to 8000 cm{sup 2}/V/s, could be reached in Ge/Si NWs. Atomistic calculations reveal the considerable influence of the strains induced by the Si shell on the hole transport, whatever the NW orientation. The enhancement of electron-phonon interactions by confinement, which usually degrades the mobility in NWs, is therefore outbalanced by the effect of strains.
- OSTI ID:
- 22395492
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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