Nanoscale measurement of Nernst effect in two-dimensional charge density wave material 1T-TaS2

Wu, Stephen M.; Luican-Mayer, Adina; Bhattacharya, Anand

doi:10.1063/1.5004804

Title: Nanoscale measurement of Nernst effect in two-dimensional charge density wave material 1T-TaS₂

Journal Article · Mon Nov 27 00:00:00 EST 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5004804· OSTI ID:1422389

Wu, Stephen M. ^[1]; Luican-Mayer, Adina ^[2]; Bhattacharya, Anand ^[3]

Univ. of Rochester, NY (United States); Argonne National Laboratory (ANL), Argonne, IL (United States). Materials Science Division
Univ. of Rochester, NY (United States); Argonne National Laboratory (ANL), Argonne, IL (United States). Nanoscience and Technology Division; Univ. of Ottawa, Ottawa, ON (Canada). Dept. of Physics
Argonne National Laboratory (ANL), Argonne, IL (United States). Materials Science Division and Nanoscience and Technology Division

Advances in nanoscale material characterization on two-dimensional van der Waals layered materials primarily involve their optical and electronic properties. The thermal properties of these materials are harder to access due to the difficulty of thermal measurements at the nanoscale. In this work, we create a nanoscale magnetothermal device platform to access the basic out-of-plane magnetothermal transport properties of ultrathin van der Waals materials. Specifically, the Nernst effect in the charge density wave transition metal dichalcogenide 1T-TaS₂ is examined on nano-thin flakes in a patterned device structure. It is revealed that near the commensurate charge density wave (CCDW) to nearly commensurate charge density wave (NCCDW) phase transition, the polarity of the Nernst effect changes. Since the Nernst effect is especially sensitive to changes in the Fermi surface, this suggests that large changes are occurring in the out-of-plane electronic structure of 1T-TaS₂, which are otherwise unresolved in just in-plane electronic transport measurements. This may signal a coherent evolution of out-of-plane stacking in the CCDW! NCCDW transition.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1422389

Alternate ID(s):: OSTI ID: 1410711

Journal Information:: Applied Physics Letters, Vol. 111, Issue 22; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 5 works

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