Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS2 devices

Mohammadzadeh, Amirmahdi; Rehman, Adil; Kargar, Fariborz; Rumyantsev, Sergei; Smulko, Janusz M.; Knap, Wojciech; Lake, Roger K.; Balandin, Alexander A.

doi:10.1063/5.0055401

Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS₂ devices

Journal Article · Tue Jun 01 00:00:00 EDT 2021 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0055401· OSTI ID:1853705

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Univ. of California, Riverside, CA (United States); Univ. of California, Riverside (United States)
Polish Academy of Sciences (PAS), Warsaw (Poland)
Univ. of California, Riverside, CA (United States)
Gdansk University of Technology (Poland)
Polish Academy of Sciences (PAS), Warsaw (Poland); Warsaw Univ. of Technology (Poland); University of Montpellier (France); Centre National de la Recherche Scientifique (CNRS) (France)

Here we report on the depinning of nearly commensurate charge-density waves in 1T-TaS₂ thin films at room temperature. A combination of the differential current–voltage measurements with the low-frequency noise spectroscopy provides unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS₂ is not accompanied by an observable abrupt increase in electric current—in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS₂ devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density wave islands. The depinning fields in 1T-TaS₂ thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density wave devices in electronics.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of California, Riverside, CA (United States)

Sponsoring Organization:: European Union (EU); Foundation for Polish Sciences; USDOE; USDOE Office of Science (SC); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0021020

OSTI ID:: 1853705

Alternate ID(s):: OSTI ID: 1785398
OSTI ID: 1904171

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 118; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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