Active Hot Spot Cooling of GaN Transistors With Electric Field Enhanced Jumping Droplet Condensation.

Conference · Tue Nov 01 04:00:00 EDT 2016

DOI:https://doi.org/10.1109/APEC.2017.7930805· OSTI ID:1422100

Foulkes, Thomas; Foulkes, Thomas; Pilawa, Robert; Pilawa, Robert; Milkjovic, Nenad; Milkjovic, Nenad; Oh, Junho; Oh, Junho; Neely, Jason C.; Neely, Jason C.; Birbarah, Patrick; Birbarah, Patrick

Abstract not provided.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1422100
• Report Number(s): SAND2016-12041C; 649509
• Country of Publication: United States
• Language: English