Active Hot Spot Cooling of GaN Transistors With Electric Field Enhanced Jumping Droplet Condensation.
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1422100
- Report Number(s):
- SAND2016-12041C; 649509
- Resource Relation:
- Conference: Proposed for presentation at the Applied Power Electronics Conference 2017 held March 26-30, 2017 in Tampa, FL.
- Country of Publication:
- United States
- Language:
- English
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