Jumping-droplet electronics hot-spot cooling

Oh, Junho; Birbarah, Patrick; Foulkes, Thomas; Yin, Sabrina L.; Rentauskas, Michelle; Neely, Jason; Pilawa-Podgurski, Robert C. N.; Miljkovic, Nenad

doi:10.1063/1.4979034

Jumping-droplet electronics hot-spot cooling

Journal Article · Mon Mar 20 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4979034· OSTI ID:1346473

^[1]; Birbarah, Patrick ^[2]; Foulkes, Thomas ^[2]; Yin, Sabrina L. ^[2]; Rentauskas, Michelle ^[2]; Neely, Jason ^[3]; Pilawa-Podgurski, Robert C. N. ^[2]; Miljkovic, Nenad ^[4]

Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States); Department of Mechanical Science and Engineering, University of Illinois, Urbana-Champaign
Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States); Kyushu Univ., Fukuoka (Japan)

Demand for enhanced cooling technologies within various commercial and consumer applications has increased in recent decades due to electronic devices becoming more energy dense. This study demonstrates jumping-droplet based electric-field-enhanced (EFE) condensation as a potential method to achieve active hot spot cooling in electronic devices. To test the viability of EFE condensation, we developed an experimental setup to remove heat via droplet evaporation from single and multiple high power gallium nitride (GaN) transistors acting as local hot spots (4.6 mm x 2.6 mm). An externally powered circuit was developed to direct jumping droplets from a copper oxide (CuO) nanostructured superhydrophobic surface to the transistor hot spots by applying electric fields between the condensing surface and the transistor. Heat transfer measurements were performed in ambient air (22-25°C air temperature, 20-45% relative humidity) to determine the effect of gap spacing (2-4 mm), electric field (50-250 V/cm), and heat flux (demonstrated to 13 W/cm²). EFE condensation was shown to enhance the heat transfer from the local hot spot by ≈ 200% compared to cooling without jumping and by 20% compared to non-EFE jumping. Dynamic switching of the electric field for a two-GaN system reveals the potential for active cooling of mobile hot spots. The opportunity for further cooling enhancement by the removal of non-condensable gases promises hot spot heat dissipation rates approaching 120 W/cm². Finally, this work provides a framework for the development of active jumping droplet based vapor chambers and heat pipes capable of spatial and temporal thermal dissipation control.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States)

Sponsoring Organization:: USDOE; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1346473

Alternate ID(s):: OSTI ID: 1361795

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 110; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Coalescence-induced jumping of droplets on superomniphobic surfaces with macrotexture Vahabi, Hamed; Wang, Wei; Mabry, Joseph M. Science Advances, Vol. 4, Issue 11 https://doi.org/10.1126/sciadv.aau3488	journal	November 2018
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