High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Qi, Meng; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Zhao, Yuning; Protasenko, Vladimir; Song, Bo; Yan, Xiaodong; Li, Guowang; Verma, Jai; Bader, Samuel; Fay, Patrick; Xing, Huili Grace; Jena, Debdeep

doi:10.1063/1.4936891

Title: High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Journal Article · Tue Dec 08 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4936891· OSTI ID:1420571

; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang;

; Protasenko, Vladimir; Song, Bo;

; Li, Guowang; Verma, Jai;

; Fay, Patrick; Xing, Huili Grace; Jena, Debdeep

Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm2 is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm2 is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI ID:: 1420571

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 107 Journal Issue: 23; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 51 works

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References (20)

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