Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Hu, Zongyang; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Qi, Meng; Pan, Ming; Gao, Xiang; Protasenko, Vladimir; Jena, Debdeep; Xing, Huili Grace

doi:10.1063/1.4937436

Title: Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Journal Article · Tue Dec 15 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4937436· OSTI ID:1420569

Hu, Zongyang; Nomoto, Kazuki; Song, Bo; Zhu, Mingda;

; Pan, Ming; Gao, Xiang; Protasenko, Vladimir; Jena, Debdeep; Xing, Huili Grace

Textbook-like device characteristics are demonstrated in vertical GaN p-n diodes grown on bulk GaN substrates. These devices show simultaneously an avalanche breakdown voltage (BV) of >1.4 kV under reverse bias, an ideality factor plateau of ∼2.0 in a forward bias window followed by a near unity ideality factor of 1.1, which are consistently achieved over a temperature range of 300–400 K. At room temperature (RT), the diode with a mesa diameter of 107 μm showed a differential on-resistance Ron of 0.12 mΩcm2, thus resulting in a record figure-of-merit BV2/Ron of ∼16.5 GW/cm2, which is the highest ever demonstrated in any semiconductors. Analytical models are used to fit experimental I-Vs; based on the recombination current with an ideality factor of ∼2.0, a Shockley-Read-Hall lifetime of 12 ns is extracted at RT with an estimated recombination center concentration of 3 × 1015 cm−3.

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI ID:: 1420569

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 107 Journal Issue: 24; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 142 works

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References (15)

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon Zhu, Mingda; Song, Bo; Qi, Meng IEEE Electron Device Letters, Vol. 36, Issue 4 https://doi.org/10.1109/LED.2015.2404309	journal	April 2015
p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents Hurni, Christophe A.; Bierwagen, Oliver; Lang, Jordan R. Applied Physics Letters, Vol. 97, Issue 22 https://doi.org/10.1063/1.3521388	journal	November 2010
The rate of radiative recombination in the nitride semiconductors and alloys Dmitriev, Alexey; Oruzheinikov, Alexander Journal of Applied Physics, Vol. 86, Issue 6 https://doi.org/10.1063/1.371196	journal	September 1999
High Voltage Vertical GaN p-n Diodes With Avalanche Capability Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui IEEE Transactions on Electron Devices, Vol. 60, Issue 10 https://doi.org/10.1109/TED.2013.2266664	journal	October 2013
High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates Xing, H.; Dora, Y.; Chini, A. IEEE Electron Device Letters, Vol. 25, Issue 4 https://doi.org/10.1109/LED.2004.824845	journal	April 2004
Photon-recycling GaN p-n diodes demonstrating temperature-independent, extremely low on-resistance Mochizuki, K.; Nomoto, K.; Hatakeyama, Y. 2011 IEEE International Electron Devices Meeting (IEDM), 2011 International Electron Devices Meeting https://doi.org/10.1109/IEDM.2011.6131617	conference	December 2011
Analysis of deep levels in n ‐type GaN by transient capacitance methods Hacke, P.; Detchprohm, T.; Hiramatsu, K. Journal of Applied Physics, Vol. 76, Issue 1 https://doi.org/10.1063/1.357144	journal	July 1994
Vertical Power p-n Diodes Based on Bulk GaN Kizilyalli, Isik C.; Edwards, Andrew P.; Aktas, Ozgur IEEE Transactions on Electron Devices, Vol. 62, Issue 2 https://doi.org/10.1109/TED.2014.2360861	journal	February 2015
Minority carrier recombination in heavily-doped silicon Tyagi, M. S.; Van Overstraeten, R. Solid-State Electronics, Vol. 26, Issue 6 https://doi.org/10.1016/0038-1101(83)90174-0	journal	June 1983
Performance limiting surface defects in SiC epitaxial p-n junction diodes Kimoto, T.; Miyamoto, N.; Matsunami, H. IEEE Transactions on Electron Devices, Vol. 46, Issue 3 https://doi.org/10.1109/16.748864	journal	March 1999
Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes Shah, Jay M.; Li, Y. -L.; Gessmann, Th. Journal of Applied Physics, Vol. 94, Issue 4 https://doi.org/10.1063/1.1593218	journal	August 2003
Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence Kumakura, K.; Makimoto, T.; Kobayashi, N. Applied Physics Letters, Vol. 86, Issue 5 https://doi.org/10.1063/1.1861116	journal	January 2005
A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon Schenk, A. Solid-State Electronics, Vol. 35, Issue 11 https://doi.org/10.1016/0038-1101(92)90184-E	journal	November 1992
Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics Sah, Chih-tang; Noyce, Robert; Shockley, William Proceedings of the IRE, Vol. 45, Issue 9 https://doi.org/10.1109/JRPROC.1957.278528	journal	September 1957
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures Ambacher, O.; Smart, J.; Shealy, J. R. Journal of Applied Physics, Vol. 85, Issue 6 https://doi.org/10.1063/1.369664	journal	March 1999

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