Use of inverse quasi-epitaxy to modify order during post-deposition processing of organic photovoltaics
Patent
·
OSTI ID:1414404
Disclosed herein are methods for fabricating an organic photovoltaic device comprising depositing an amorphous organic layer and a crystalline organic layer over a first electrode, wherein the amorphous organic layer and the crystalline organic layer contact one another at an interface; annealing the amorphous organic layer and the crystalline organic layer for a time sufficient to induce at least partial crystallinity in the amorphous organic layer; and depositing a second electrode over the amorphous organic layer and the crystalline organic layer. In the methods and devices herein, the amorphous organic layer may comprise at least one material that undergoes inverse-quasi epitaxial (IQE) alignment to a material of the crystalline organic layer as a result of the annealing.
- Research Organization:
- The Regents of the University of Michigan, Ann Arbor, MI (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- SC0000957; EE0005310
- Assignee:
- The Regents of the University of Michigan (Ann Arbor, MI)
- Patent Number(s):
- 9,847,487
- Application Number:
- 14/646,136
- OSTI ID:
- 1414404
- Country of Publication:
- United States
- Language:
- English
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