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All-optical lithography process for contacting nanometer precision donor devices

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4998639· OSTI ID:1411615
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
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In this article, we describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1411615
Alternate ID(s):
OSTI ID: 1407437
OSTI ID: 1421616
Report Number(s):
SAND2017-10812J; 657591
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 111; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (2)

Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices journal August 2019
CMOS platform for atomic-scale device fabrication journal August 2018

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Related Subjects

36 MATERIALS SCIENCE
Chemical compounds
Circuits
Nano-wires
Photolithography
Scanning tunnelling microscopy