Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

Journal Article · Mon Mar 23 00:00:00 EDT 2020 · Proceedings of SPIE - The International Society for Optical Engineering

DOI:https://doi.org/10.1117/12.2551455· OSTI ID:1619225

Katzenmeyer, Aaron ^[1]; Dmitrovic, Sanja ^[2]; Baczewski, Andrew ^[1]; Bussmann, Ezra ^[1]; Lu, Tzu-Ming ^[1]; Anderson, Evan ^[1]; Schmucker, Scott ^[1]; Ivie, Jeff ^[1]; Campbell, DeAnna ^[1]; Ward, Daniel ^[1]; Wang, George ^[1]; Misra, Shashank ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
2. Univ. of Arizona, Tucson, AZ (United States)

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
• Grant/Contract Number: AC04-94AL85000; NA0003525
• OSTI ID: 1619225
• Alternate ID(s): OSTI ID: 1768141
• Report Number(s): SAND--2020-2754J; 684514
• Journal Information: Proceedings of SPIE - The International Society for Optical Engineering, Journal Name: Proceedings of SPIE - The International Society for Optical Engineering Vol. 11324; ISSN 0277-786X
• Publisher: SPIE
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
hydrogen lithography
nanoscale devices
photolithography
photothermal effects
scanned probe lithography
surface morphology