Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry

Katzenmeyer, Aaron M.; Luk, Ting S.; Bussmann, Ezra; Young, Steve; Anderson, Evan M.; Marshall, Michael T.; Ohlhausen, James A.; Kotula, Paul; Lu, Ping; Campbell, DeAnna M.; Lu, Tzu-Ming; Liu, Peter Q.; Ward, Daniel R.; Misra, Shashank

doi:10.1557/jmr.2020.155

Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry

Journal Article · Tue Jun 23 00:00:00 EDT 2020 · Journal of Materials Research

DOI:https://doi.org/10.1557/jmr.2020.155· OSTI ID:1644064

Katzenmeyer, Aaron M. ^[1]; Luk, Ting S. ^[1]; Bussmann, Ezra ^[1]; Young, Steve ^[1]; Anderson, Evan M. ^[1]; Marshall, Michael T. ^[1]; Ohlhausen, James A. ^[1]; Kotula, Paul ^[1]; Lu, Ping ^[1]; Campbell, DeAnna M. ^[1]; Lu, Tzu-Ming ^[1]; Liu, Peter Q. ^[1]; Ward, Daniel R. ^[1]; ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Hydrogen lithography has been used to template phosphine-based surface chemistry to fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced manufacturing (APAM). In this work, we use mid-infrared variable angle spectroscopic ellipsometry (IR-VASE) to characterize single-nanometer thickness phosphorus dopant layers (δ-layers) in silicon made using APAM compatible processes. A large Drude response is directly attributable to theδ-layer and can be used for nondestructive monitoring of the condition of the APAM layer when integrating additional processing steps. Furthermore, the carrier density and mobility extracted from our room temperature IR-VASE measurements are consistent with cryogenic magneto-transport measurements, showing that APAM δ-layers function at room temperature. Finally, the permittivity extracted from these measurements shows that the doping in the APAM δ-layers is so large that their low-frequency in-plane response is reminiscent of a silicide. However, there is no indication of a plasma resonance, likely due to reduced dimensionality and/or low scattering lifetime.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1644064

Report Number(s):: SAND--2020-3125J; 684747

Journal Information:: Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 16 Vol. 35; ISSN 0884-2914

Publisher:: Materials Research SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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