Characterization of AlGaAs/GaAs multilayer structures prepared by molecular beam epitaxy
- AT&T Bell Laboratories, Reading, PA (United States)
Well-defined material parameters are required for AlGaAs/GaAs heterostructure wafers prepared for the fabrication of depletion and enhancement mode field effect transistors. The device properties are dependent upon the epitaxial layer thicknesses, the silicon donor layer concentration and the alloy compositions, as well as the concentration of electrically active impurities present at the substrate-epitaxial layer interface. Layer thicknesses are measured in angstroms, therefore, cross-sectional transmission electron micrographs are needed for layer thickness information. Knowledge of the two dimensional electron gas channel carrier concentration and mobility is obtained by Hall-effect measurements. Excitonic transitions occurring within the heterostructure are measured by photoreflectance and low temperature cathodoluminescence spectroscopies. Secondary ion mass spectroscopy is employed to obtain the concentrations of electrically active chemical impurities present at the substrate epitaxial layer interface. These characterization techniques are carried out on one of twelve wafers from each growth run and provide a means of correlating material properties with device performance.
- OSTI ID:
- 141103
- Report Number(s):
- CONF-930304-; TRN: 93:003688-0778
- Resource Relation:
- Conference: 205. American Chemical Society national meeting, Denver, CO (United States), 28 Mar - 2 Apr 1993; Other Information: PBD: 1993; Related Information: Is Part Of 205th ACS national meeting; PB: 1951 p.
- Country of Publication:
- United States
- Language:
- English
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