Substrate-epitaxial layer interface effects on AlGaAs/GaAs heterostructure device properties
- AT and T Bell Labs., Reading, PA (United States)
- AT and T Bell Labs., Murray Hill, NJ (United States)
Device characteristics of AlGaAs/GaAs heterostructure field effect transistors fabricated by molecular-beam epitaxial growth are related to the condition of the substrate-epitaxial layer interface. The presence of carbon on the GaAs wafer surface prior to growth has been found to produce a p-type, conducting interfacial region. The authors demonstrate that the concentration of carbon on the wafer surface can be significantly reduced by exposing the wafers to ultraviolet radiation. Depletion- and enhancement-mode device transfer characteristics and transfer characteristics and transconductance curves have been obtained on heterostructure wafers that were subjected to an ultraviolet-ozone surface preparation. A comparison of these results with the device properties of wafers receiving a standard cleaning procedure is presented. A model describing the interaction between the interfacial p-type region and the two-dimensional electron gas channel is also included.
- OSTI ID:
- 7305832
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
DEPLETION LAYER
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EPITAXY
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTIONS
LAYERS
MATERIALS
MOLECULAR BEAM EPITAXY
P-N JUNCTIONS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
TRANSISTORS
ULTRAVIOLET RADIATION