W-shaped diffused stripped gaas/algaas laser
A w-shaped diffused stripe GaAs/AlGaAs laser and a method for making the same. A double heterostructure layered structure includes a p-type GaAs active layer in contact with a p-type AlGaAs current blocking layer. These layers are sandwiched between two N-type AlGaAs confinement layers. A p-type zinc diffused stripe region having a W-shaped diffusion front extends longitudinally between two reflective surfaces located on respective ends of the device and extends vertically from the surface of the upper confinement layer through a portion of the lower confinement layer and through portions of the various intervening layers. In a method of forming the device, the various layers are formed by epitaxial growth or by metalorganic chemical vapor deposition. The stripe region is formed by diffusing zinc into the device from a source through a pair of parallel slots in a diffusion mask. The zinc diffused into the device is further driven-in by heating the device in the absence of the zinc source.
- Assignee:
- The United States of Americas as represented by the Secretary of the Navy
- Patent Number(s):
- US 4521887
- OSTI ID:
- 6483747
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER MATERIALS
LASERS
MATERIALS
METALS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
ZINC