skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB 2

Abstract

Using low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM), we observe a new two-dimensional (2D) silicon crystal that is formed by depositing additional Si atoms onto spontaneously-formed epitaxial silicene on a ZrB2 thin film. From scanning tunnelling spectroscopy (STS) studies, we find that this atomically-thin layered silicon has distinctly different electronic properties. Angle resolved photoelectron spectroscopy (ARPES) reveals that, in sharp contrast to epitaxial silicene, the layered silicon exhibits significantly enhanced density of states at the Fermi level resulting from newly formed metallic bands. The 2D growth of this material could allow for direct contacting to the silicene surface and demonstrates the dramatic changes in electronic structure that can occur by the addition of even a single monolayer amount of material in 2D systems.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1409566
Report Number(s):
BNL-114618-2017-JA¿¿¿
Journal ID: ISSN 2053-1583
DOE Contract Number:  
SC0012704
Resource Type:
Journal Article
Resource Relation:
Journal Name: 2D Materials; Journal Volume: 4; Journal Issue: 2
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gill, Tobias G., Fleurence, Antoine, Warner, Ben, Prüser, Henning, Friedlein, Rainer, Sadowski, Jerzy T., Hirjibehedin, Cyrus F., and Yamada-Takamura, Yukiko. Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB 2. United States: N. p., 2017. Web. doi:10.1088/2053-1583/aa5a80.
Gill, Tobias G., Fleurence, Antoine, Warner, Ben, Prüser, Henning, Friedlein, Rainer, Sadowski, Jerzy T., Hirjibehedin, Cyrus F., & Yamada-Takamura, Yukiko. Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB 2. United States. doi:10.1088/2053-1583/aa5a80.
Gill, Tobias G., Fleurence, Antoine, Warner, Ben, Prüser, Henning, Friedlein, Rainer, Sadowski, Jerzy T., Hirjibehedin, Cyrus F., and Yamada-Takamura, Yukiko. Fri . "Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB 2". United States. doi:10.1088/2053-1583/aa5a80.
@article{osti_1409566,
title = {Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB 2},
author = {Gill, Tobias G. and Fleurence, Antoine and Warner, Ben and Prüser, Henning and Friedlein, Rainer and Sadowski, Jerzy T. and Hirjibehedin, Cyrus F. and Yamada-Takamura, Yukiko},
abstractNote = {Using low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM), we observe a new two-dimensional (2D) silicon crystal that is formed by depositing additional Si atoms onto spontaneously-formed epitaxial silicene on a ZrB2 thin film. From scanning tunnelling spectroscopy (STS) studies, we find that this atomically-thin layered silicon has distinctly different electronic properties. Angle resolved photoelectron spectroscopy (ARPES) reveals that, in sharp contrast to epitaxial silicene, the layered silicon exhibits significantly enhanced density of states at the Fermi level resulting from newly formed metallic bands. The 2D growth of this material could allow for direct contacting to the silicene surface and demonstrates the dramatic changes in electronic structure that can occur by the addition of even a single monolayer amount of material in 2D systems.},
doi = {10.1088/2053-1583/aa5a80},
journal = {2D Materials},
number = 2,
volume = 4,
place = {United States},
year = {Fri Feb 17 00:00:00 EST 2017},
month = {Fri Feb 17 00:00:00 EST 2017}
}