Impact of laser anneal on NiPt silicide texture and chemical composition

Feautrier, C.; Ozcan, A. S.; Lavoie, C.; Valery, A.; Beneyton, R.; Borowiak, C.; Clément, L.; Pofelski, A.; Salem, B.

doi:10.1063/1.4985279

Impact of laser anneal on NiPt silicide texture and chemical composition

Journal Article · Mon Jun 12 00:00:00 EDT 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4985279· OSTI ID:1409558

^[1]; Ozcan, A. S. ^[2]; Lavoie, C. ^[3]; ^[4]; Beneyton, R. ^[4]; Borowiak, C. ^[4]; Clément, L. ^[4]; Pofelski, A. ^[4]; Salem, B. ^[5]

STMicroelectronics, Crolles Cedex (France); Univ. Grenoble Alpes, Grenoble (France)
IBM Almaden Research Center, San Jose, CA (United States); IBM, Crolles Cedex (France)
IBM T. J. Watson Research Center, Yorktown Heights, NY (United States)
STMicroelectronics, Crolles Cedex (France)
Univ. Grenoble Alpes, Grenoble (France)

We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Furthermore, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-98CH10886; SC0012704

OSTI ID:: 1409558

Alternate ID(s):: OSTI ID: 1372507

Report Number(s):: BNL--114610-2017-JA

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 22 Vol. 121; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
Annealing
Chemical elements
Crystal structure
Energy dispersive X-ray spectroscopy
Semiconductor device fabrication
Silicide
Synchrotrons
Thin films
Transition metals
Transmission electron microscopy

Impact of laser anneal on NiPt silicide texture and chemical composition

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References (33)

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