Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)
- IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States)
- IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States)
Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth.
- OSTI ID:
- 22162881
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 17; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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