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Enhancing the Quantum Anomalous Hall Effect by Magnetic Codoping in a Topological Insulator

Journal Article · · Advanced Materials
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  1. State Key Laboratory of Low Dimensional Quantum Physics Department of Physics Tsinghua University Beijing 100084 China, Collaborative Innovation Center of Quantum Matter Beijing 100084 P. R. China
  2. Department of Physics and Astronomy School of Arts and Sciences Rutgers University Piscataway NJ 08854 USA
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Abstract

The quantum anomalous Hall (QAH) effect, which has been realized in magnetic topological insulators (TIs), is the key to applications of dissipationless quantum Hall edge states in electronic devices. However, investigations and utilizations of the QAH effect are limited by the ultralow temperatures needed to reach full quantization—usually below 100 mK in either Cr‐ or V‐doped (Bi,Sb) 2 Te 3 of the two experimentally confirmed QAH materials. Here it is shown that by codoping Cr and V magnetic elements in (Bi,Sb) 2 Te 3 TI, the temperature of the QAH effect can be significantly increased such that full quantization is achieved at 300 mK, and zero‐field Hall resistance of 0.97 h / e 2 is observed at 1.5 K. A systematic transport study of the codoped (Bi,Sb) 2 Te 3 films with varied Cr/V ratios reveals that magnetic codoping improves the homogeneity of ferromagnetism and modulates the surface band structure. This work demonstrates magnetic codoping to be an effective strategy for achieving high‐temperature QAH effect in TIs.

Sponsoring Organization:
USDOE
Grant/Contract Number:
SC0008147
OSTI ID:
1408265
Alternate ID(s):
OSTI ID: 1537361
Journal Information:
Advanced Materials, Journal Name: Advanced Materials Journal Issue: 1 Vol. 30; ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)Copyright Statement
Country of Publication:
Germany
Language:
English

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