Exchange-Biased Quantum Anomalous Hall Effect

Zhang, Peng; Balakrishnan, Purnima P.; Eckberg, Christopher; Deng, Peng; Nozaki, Tomohiro; Chong, Su Kong; Quarterman, Patrick; Holtz, Megan E.; Maranville, Brian B.; Qiu, Gang; Pan, Lei; Emmanouilidou, Eve; Ni, Ni; Sahashi, Masashi; Grutter, Alexander; Wang, Kang L.

doi:10.1002/adma.202300391

Exchange-Biased Quantum Anomalous Hall Effect

Journal Article · Fri May 19 00:00:00 EDT 2023 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202300391· OSTI ID:2421731

^[1]; Balakrishnan, Purnima P. ^[2]; Eckberg, Christopher ^[3]; Deng, Peng ^[4]; Nozaki, Tomohiro ^[5]; Chong, Su Kong ^[4]; Quarterman, Patrick ^[2]; Holtz, Megan E. ^[2]; Maranville, Brian B. ^[2]; Qiu, Gang ^[4]; Pan, Lei ^[4]; Emmanouilidou, Eve ^[4]; Ni, Ni ^[4]; Sahashi, Masashi ^[5]; Grutter, Alexander ^[2]; ^[4]

Univ. of California, Los Angeles, CA (United States); OSTI
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States). Center for Neutron Research
Univ. of California, Los Angeles, CA (United States); Fibertek Inc., Herndon, VA (United States); Army Research Lab., Adelphi, MD (United States); Army Research Lab., Playa Vista, CA (United States)
Univ. of California, Los Angeles, CA (United States)
Tohoku Univ., Sendai (Japan)

The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, the QAH effect is realized in the magnetic topological insulator Cr-doped (Bi,Sb)₂Te₃ (CBST) grown on an uncompensated antiferromagnetic insulator Al-doped Cr₂O₃. Through polarized neutron reflectometry (PNR), a strong exchange coupling is found between CBST and Al-Cr₂O₃ surface spins fixing interfacial magnetic moments perpendicular to the film plane. Further, the interfacial coupling results in an exchange-biased QAH effect. This study further demonstrates that the magnitude and sign of the exchange bias can be effectively controlled using a field training process to set the magnetization of the Al-Cr₂O₃ layer. It demonstrates the use of the exchange bias effect to effectively manipulate the QAH state, opening new possibilities in QAH-based spintronics.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of California, Los Angeles, CA (United States)

Sponsoring Organization:: National Science Foundation (NSF); US Army Research Office (ARO); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0021117

OSTI ID:: 2421731

Alternate ID(s):: OSTI ID: 1987422

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 31 Vol. 35; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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