Tunneling-assisted transport of carriers through heterojunctions.
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
The formulation of carrier transport through heterojunctions by tunneling and thermionic emission is derived from first principles. The treatment of tunneling is discussed at three levels of approximation: numerical solution of the one-band envelope equation for an arbitrarily specified potential profile; the WKB approximation for an arbitrary potential; and, an analytic formulation assuming constant internal field. The effects of spatially varying carrier chemical potentials over tunneling distances are included. Illustrative computational results are presented. The described approach is used in exploratory physics models of irradiated heterojunction bipolar transistors within Sandia's QASPR program.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Security
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1406979
- Report Number(s):
- SAND-2017-11781; 658273
- Country of Publication:
- United States
- Language:
- English
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