Carrier tunneling in models of irradiated heterojunction bipolar transistors
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
As part of Sandia's program to simulate the effect of displacement damage on operation of heterojunction bipolar transistors (HBTs), we are examining the formulation in 1-D of band-to-band (bb) and band-to-trap (b-t) carrier tunneling.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1171564
- Report Number(s):
- SAND-2014-17272R; 537184
- Country of Publication:
- United States
- Language:
- English
Similar Records
Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset
Analytic band-to-trap tunneling model including band offset for heterojunction devices
Tunneling-assisted transport of carriers through heterojunctions.
Journal Article
·
Wed Oct 25 00:00:00 EDT 2017
· ECS Transactions (Online)
·
OSTI ID:1171564
Analytic band-to-trap tunneling model including band offset for heterojunction devices
Journal Article
·
Tue Feb 05 00:00:00 EST 2019
· Journal of Applied Physics
·
OSTI ID:1171564
Tunneling-assisted transport of carriers through heterojunctions.
Technical Report
·
Sun Oct 01 00:00:00 EDT 2017
·
OSTI ID:1171564