skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4979012· OSTI ID:1367976
 [1];  [2];  [2];  [2];  [2];  [2];  [3];  [3];  [4]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River National Lab., Aiken, SC (United States)
+ Show Author Affiliations

In this paper, the properties of point defects in Cd1-xZnxTe1-ySey (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the VCd- concentration. In Travelling Heater Method (THM) and Bridgman Method (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of VCd- and two additional traps (attributed to Tei- and TeCd++ appearing at around Ev + 0.26 eV and Ec - 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.

Research Organization:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Savannah River Site (SRS), Aiken, SC (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC52-07NA27344; AC09-08SR22470
OSTI ID:
1367976
Alternate ID(s):
OSTI ID: 1406493
Report Number(s):
LLNL-JRNL-718467; SRNL-STI-2017-00152
Journal Information:
Journal of Applied Physics, Vol. 121; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 22 works
Citation information provided by
Web of Science

References (14)

CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications journal March 2004
Research Update: Point defects in CdTe x Se 1−x crystals grown from a Te-rich solution for applications in detecting radiation journal April 2015
Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects journal April 2010
Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements journal November 2011
Investigation of the electronic properties of cadmium zinc telluride surfaces using pulsed laser microwave cavity perturbation conference December 2001
Point defects: Their influence on electron trapping, resistivity, and electron mobility-lifetime product in CdTe x Se 1−x detectors journal January 2016
Characterization of large cadmium zinc telluride crystals grown by traveling heater method journal January 2008
Cadmium zinc telluride and its use as a nuclear radiation detector material journal April 2001
High compositional homogeneity of CdTe x Se 1−x crystals grown by the Bridgman method journal February 2015
An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers journal March 2017
Non-stoichiometry related defects at the melt growth of semiconductor compound crystals – a review journal July 2003
Point Defects in CdZnTe Crystals Grown by Different Techniques journal February 2011
Growth and characterization of CdMnTe by the vertical Bridgman technique journal March 2016
Correlations Between Crystal Defects and Performance of CdZnTe Detectors journal August 2011

Cited By (2)

Macroscopic effects and microscopic origins of gamma-ray irradiation on In-doped CdZnTe crystal journal October 2018
Influence of deep levels on the electrical transport properties of CdZnTeSe detectors journal December 2018

Similar Records

Growth of Cd0.9Zn0.1Te1-ySey Single Crystals for Room Temperature Gamma-Ray Detection
Journal Article · Tue May 04 00:00:00 EDT 2021 · IEEE Transactions on Nuclear Science · OSTI ID:1367976
+2 more
Overcoming Mobility Lifetime Product Limitations in Vertical Bridgman Production of Cadmium Zinc Telluride Detectors
Journal Article · Wed Apr 10 00:00:00 EDT 2019 · Journal of Electronic Materials · OSTI ID:1367976
+3 more
Assessment of deep levels with selenium concentration in Cd1–xZnxTe1–ySey room temperature detector materials
Journal Article · Wed Aug 09 00:00:00 EDT 2023 · Applied Physics Letters · OSTI ID:1367976
+3 more

Related Subjects

36 MATERIALS SCIENCE
CdZnTeSe
point defects
carrier trapping
iDLTS
deep levels
radiation detectors
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY