AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; Lin, Yi-Hsuan; Machuca, Francisco; Weiss, Robert; Welsh, Alex; McCartney, Martha R.; Smith, David J.; Kravchenko, Ivan I.

doi:10.1149/2.0161711jss

AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

Journal Article · Tue Sep 26 00:00:00 EDT 2017 · ECS Journal of Solid State Science and Technology

DOI:https://doi.org/10.1149/2.0161711jss· OSTI ID:1399403

Ren, Fan ^[1]; Pearton, Stephen J. ^[2]; Ahn, Shihyun ^[1]; Lin, Yi-Hsuan ^[1]; Machuca, Francisco ^[3]; Weiss, Robert ^[3]; Welsh, Alex ^[3]; McCartney, Martha R. ^[4]; Smith, David J. ^[4]; Kravchenko, Ivan I. ^[5]

Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering
Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science Engineering
Tivra Corporation, Oakland, CA (United States)
Tivra Corporation, Oakland, CA (United States); Arizona State Univ., Tempe, AZ (United States). Dept. of Physics
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)

AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter (“a-parameter”) to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06°, 0.05° and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer and the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. Finally, the estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 10⁸ cm^-2 range.

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1399403

Journal Information:: ECS Journal of Solid State Science and Technology, Journal Name: ECS Journal of Solid State Science and Technology Journal Issue: 11 Vol. 6; ISSN 2162-8769

Publisher:: Electrochemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (10)

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