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Title: AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

Journal Article · · ECS Journal of Solid State Science and Technology
DOI:https://doi.org/10.1149/2.0161711jss· OSTI ID:1399403
 [1];  [2];  [1];  [1];  [3];  [3];  [3];  [4];  [4];  [5]
  1. Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering
  2. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science Engineering
  3. Tivra Corporation, Oakland, CA (United States)
  4. Tivra Corporation, Oakland, CA (United States); Arizona State Univ., Tempe, AZ (United States). Dept. of Physics
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
+ Show Author Affiliations

AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter (“a-parameter”) to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06°, 0.05° and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer and the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. Finally, the estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 108 cm-2 range.

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
AC05-00OR22725; FA8650-15-M-1912; HC1047-05-D4005
OSTI ID:
1399403
Journal Information:
ECS Journal of Solid State Science and Technology, Vol. 6, Issue 11; ISSN 2162-8769
Publisher:
Electrochemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

References (10)

Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE journal December 2001
AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity journal March 2008
30-W/mm GaN HEMTs by Field Plate Optimization journal March 2004
Epitaxial Growth of High Quality GaN Films on Lattice Matched Metallic Layers journal April 2015
RF performance of HVPE-grown AlGaN/GaN HEMTs journal January 2004
Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates
  • Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 34, Issue 5 https://doi.org/10.1116/1.4963064
journal September 2016
High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE journal January 2000
100 nm gate AlGaN/GaN HEMTs on silicon with fT=90 GHz journal January 2009
GaN: Processing, defects, and devices journal July 1999
Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy journal January 2003

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