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Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

Journal Article · · Journal of Vacuum Science and Technology B
DOI:https://doi.org/10.1116/1.4963064· OSTI ID:1327654
 [1];  [1];  [1];  [1];  [2];  [2];  [2];  [3];  [3];  [4]
  1. Univ. of Florida, Gainesville, FL (United States)
  2. Triva Corp., Oakland, CA (United States)
  3. Arizona State Univ., Tempe, AZ (United States)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
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Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffer layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 108 cm–2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (fT) of 8.9 GHz and a maximum frequency of oscillation (fmax) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1327654
Journal Information:
Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Journal Issue: 5 Vol. 34; ISSN 2166-2746; ISSN JVTBD9
Publisher:
American Vacuum Society/AIPCopyright Statement
Country of Publication:
United States
Language:
English

Cited By (1)

Statistical Coulomb interactions in multi-beam SEM journal December 2019

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Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
III-V semiconductors
MODETs
buffer layers
sapphire
transmission electron microscopy