Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well

Miao, M. S.; Yan, Q.; Van de Walle, C. G.; Lou, W. K.; Li, L. L.; Chang, K.

doi:10.1103/PhysRevLett.109.186803

Polarization-Driven Topological Insulator Transition in a $GaN / InN / GaN$ Quantum Well

Journal Article · Thu Nov 01 04:00:00 EDT 2012 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.109.186803· OSTI ID:1386378

Miao, M. S.; Yan, Q.; Van de Walle, C. G.; Lou, W. K.; Li, L. L.; Chang, K.

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)

Sponsoring Organization:: USDOE SC Office of Basic Energy Sciences (SC-22)

DOE Contract Number:: SC0001009

OSTI ID:: 1386378

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 18 Vol. 109; ISSN 0031-9007; ISSN PRLTAO

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

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