Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well

Journal Article · Fri Nov 02 04:00:00 EDT 2012 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.109.186803· OSTI ID:1105573

Miao, M. S.; Yan, Q.; Van de Walle, C. G.; Lou, W. K.; Li, L. L.; Chang, K.

Topological insulator (TI) states have been demonstrated in materials with a narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with a sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k∙p Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable.

• Research Organization: Energy Frontier Research Centers (EFRC); Center for Energy Efficient Materials (CEEM)
• Sponsoring Organization: USDOE SC Office of Basic Energy Sciences (SC-22)
• DOE Contract Number: SC0001009
• OSTI ID: 1105573
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 18 Vol. 109; ISSN 0031-9007; ISSN PRLTAO
• Publisher: American Physical Society (APS)
• Country of Publication: United States
• Language: English

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