Theoretical study of InN/GaN short period superlattices to mimic disordered alloys

Journal Article · Sat Jun 14 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4882879· OSTI ID:22304174

Marques, M. ^[1]

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1. Instituto Tecnológico de Aeronáutica, São Paulo state (Brazil)

We carried out ab initio calculations of the (InN){sub n}∕(GaN){sub m} short period superlattices using the LDA-1/2 method in order to obtain approximate quasiparticle electronic structures. We performed calculations for several short period superlattices respecting the concentrations of 33%, 50%, 66%, and 80% of InN, considering different straining possibilities due to lattice mismatches. For the majority of configurations, we find relevant changes on the valence and conduction profiles around bandgap with position plane-by-plane along the superlattices growth direction, with the presence of intrinsic electric fields in the materials, in the case, when strain is applied. Our results show that for small numbers n and m of layers, the band edge states extend over the entire superlattice. For larger n and/or m, the edge states tend to localise on particular subtype layers (InN or GaN). For the former cases, the bandgaps are very close to the random alloys with the same concentrations, providing potential good materials for optoelectronic devices based on nitrides.

• OSTI ID: 22304174
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 22 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
CONFIGURATION
CRYSTAL DEFECTS
CRYSTAL GROWTH
ELECTRIC FIELDS
ELECTRONIC STRUCTURE
GALLIUM NITRIDES
INDIUM NITRIDES
LAYERS
RANDOMNESS
STRAINS
SUPERLATTICES