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Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well

Journal Article · · Physical Review Letters
Not Available
Sponsoring Organization:
USDOE
OSTI ID:
1101704
Alternate ID(s):
OSTI ID: 1105573
OSTI ID: 1386378
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 18 Vol. 109; ISSN 0031-9007; ISSN PRLTAO
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

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