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Analysis of thermal properties of GaInN light-emitting diodes and laser diodes

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3493117· OSTI ID:1383694
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Research Organization:
Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)
Sponsoring Organization:
USDOE SC Office of Basic Energy Sciences (SC-22)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1383694
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 108; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English

References (6)

An accurate calculation of spreading resistance journal April 2006
Ohmic contacts for GaAs devices journal December 1967
Optical power degradation mechanisms in AlGaN-based 280nm deep ultraviolet light-emitting diodes on sapphire journal March 2006
A new approach to the dynamic thermal modelling of semiconductor packages journal June 2001
Spreading resistance of a round ohmic contact journal February 1993
Light-Emitting Diodes book January 2006

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